The company’s GaNSafe family—already packing 2kV ESD protection and short-circuit detection that reacts in 350 nanoseconds—is now available in a TOLT package. That stands for Transistor Outline Leaded Top-side cooling, and it’s exactly what it sounds like: heat escapes through the top of the chip directly into a heatsink, not through the circuit board. For anyone building AI data center power supplies, solar inverters, or industrial gear, that means lower operating temps, higher current, and a lot less thermal headache.
The GaNSafe line is Navitas’ fourth-generation gallium nitride platform, designed for systems pulling between one and 22 kilowatts. It integrates control logic, gate drive, sensing, and protection into a single 4-pin package that behaves like a discrete FET—no extra VCC pin needed. You get programmable slew rate control, a built-in Miller clamp that eliminates negative gate bias, and 650V continuous operation with 800V transient tolerance. That’s the kind of headroom that keeps engineers from losing sleep over surge events.
Navitas claims more than 200 million GaN units shipped and backs the new parts with a 20-year warranty. The TOLT package itself is rated for extreme board-level thermal cycling, and the company is already offering reference designs for data-center PSUs and EV onboard chargers. “As the most protected, reliable and safe GaN devices in the industry, GaNSafe took our technology into mainstream applications above 1kW,” says Charles Bailley, senior director of business development. “Now, with the enhanced thermal dissipation of the TOLT package, we are enabling customers to deliver even better performance.”
What this means: GaN has officially outgrown its reputation as a delicate, finicky alternative to silicon. With top-side cooling and integrated armor, Navitas is betting that the next generation of high-power infrastructure won’t just use GaN—it’ll demand it.
