ROHM Semiconductor has selected Aixtron’s G10-GaN MOCVD system to establish in-house gallium nitride epitaxy at its Hamamatsu plant, marking a strategic shift toward vertical integration for high-volume power device production.
Strategic rationale
The move addresses Rohm’s reliance on external foundries for its 650V GaN devices. By insourcing epitaxy, Rohm gains direct control over wafer quality, process uniformity, and production scheduling—critical factors for scaling next-generation power semiconductors.
Rohm’s EcoGaN product family targets high-growth applications in AI data-center infrastructure and electric vehicle powertrains. The 650V GaN HEMTs serve server power supplies, onboard chargers, and DC-DC converters, while the 100V line focuses on voltage regulation modules for AI accelerators and GPU platforms where power density and thermal management are paramount.
Technology and collaboration
Aixtron’s G10-GaN platform is a production-proven system for high-volume GaN-on-silicon epitaxy. It delivers the uniformity, throughput, and process control required for devices with high breakdown voltage, low on-resistance, and excellent thermal stability—key specifications for 650V and 100V power applications.
The partnership extends beyond equipment supply. Both companies are collaborating on process optimization and long-term technology roadmap alignment. Rohm’s executive officer Yasushi Hamazawa noted that Aixtron’s active engagement on process development and roadmap planning will strengthen product competitiveness for AI and automotive customers.
Market implications
Aixtron CEO Dr. Felix Grawert described Rohm’s decision as a “pivotal shift” in how leading device manufacturers are securing compound semiconductor supply chains. The collaboration combines Aixtron’s epitaxial process expertise with Rohm’s proven device technology, accelerating mainstream adoption of GaN power electronics.
With in-house GaN epitaxy, Rohm strengthens its ability to respond to fast-moving customer requirements in AI and automotive markets. The GaN power device market is projected to reach approximately $3 billion by 2030.
Forward outlook
This partnership signals a broader industry trend: leading power semiconductor manufacturers are moving critical process steps in-house to secure supply chains and improve performance control. For Rohm, the transition positions it to capture a larger share of the expanding GaN power market, particularly as AI infrastructure and EV platforms demand ever-higher efficiency and power density. The success of this ramp will depend on how quickly the Hamamatsu fab can achieve volume production at target yields—a benchmark that will define Rohm’s competitive standing in the coming years.
