Quadruple patterning has carried CXMT’s memory array down to an 11.95 nanometer active-area half-pitch, the centerpiece of a DRAM platform the Chinese maker now calls ready for volume.
Two 24-gigabit LPDDR5X products built on that platform have entered mass production as well, the company said. Each die holds 3 gigabytes, half again as much as older 16Gb parts, and will ship in two package types to suit different handset designs.
The disclosure came at the World Manufacturing Convention in Hefei, where vice-president Luo Xiaodong said the process capability now matches the most advanced nodes in mass production anywhere.
CXMT also cites a 45:1 capacitor aspect ratio and a high-k metal gate step that trims a key functional region to 6,762 nanometers. On an 8Gb-equivalent basis, the platform returns at least 50 percent more gross dies per wafer than its predecessor, though that count is taken before defective units are screened out.
Actual yields and monthly output were not disclosed. Analysts note the 11.95 nanometer number measures a single core structure, which makes it hard to line up against the 12-nanometer-class labels Samsung, SK hynix and Micron use.
The company says the new parts are already inside mainstream domestic flagship phones, but has not identified which brands or models carry them.
