Win Semiconductors qualifies 0.12µm GaN process for 40V operation

WIN Semiconductors has qualified its NP12-0B 0.12µm GaN-on-SiC process for reliable 40V operation, expanding the design envelope for high-performance front-end components in next-generation communications and radar systems.

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WIN Semiconductors has qualified its NP12-0B 0.12µm GaN-on-SiC process for reliable 40V operation, expanding the design envelope for high-performance front-end components in next-generation communications and radar systems.

Process qualification and performance

The NP12-0B platform, in production since 2024, integrates multiple transistor enhancements that improve ruggedness under deep-saturation and high-compression pulsed and continuous-wave conditions. Qualification testing confirms the process can now support 40V operation for power amplifiers, T/R switches, and single-chip front-end MMICs.

When optimized for maximum output power at 18GHz and 40V, the process delivers 7.9W/mm saturated output power, 13.3dB gain, and 42% power-added efficiency. Tuned for peak efficiency, the same power cell achieves 6.1W/mm saturated output power with 14.6dB gain and 55% PAE at 18GHz.

Switch and noise figure capabilities

In switch configurations, common-gate devices demonstrate insertion loss below 0.4dB, power handling exceeding 42dBm, and sub-20ns switching speeds using a 40V control voltage. The process also provides a typical minimum noise figure of 1dB with 10dB associated gain at 20GHz, enabling low-noise amplifier designs.

These combined capabilities—high output power, low insertion loss, and low noise figure—expand the trade-space for designers of radio access networks, satellite communications, and radar systems.

Availability and design support

The NP12-0B platform is available with the Enhanced Moisture Ruggedness option, ensuring humidity resistance for plastic packaging applications. An updated 40V process design kit supporting PA, switch, and LNA designs is available for customer download beginning in the second quarter of 2026.

Forward outlook

WIN’s qualification of NP12-0B for 40V operation marks a significant step in GaN-on-SiC process maturity, enabling higher performance and reliability in compact front-end designs. As demand grows for efficient, high-power mmWave components in 5G advanced networks and defense systems, this platform positions WIN to serve a broadening customer base with a proven, production-ready technology.

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