STMicroelectronics has launched a new family of 700V gallium nitride (GaN) power semiconductors, targeting efficiency and power density gains in high-demand applications from AI servers to robotics.
Product overview
The new PowerGaN devices, part of ST’s STPOWER portfolio, are enhancement-mode high-electron-mobility transistors (HEMTs) rated for 700V operation. They address fundamental limitations of conventional silicon MOSFETs, particularly in applications where rising power consumption—such as in AI data centers—demands higher-performance power conversion.
Seven devices are now available, covering continuous current ratings from 6A to 29A with typical RDS(on) values ranging from 53 mΩ to 270 mΩ. Ultra-low internal capacitances and low gate charge, inherent to wide-bandgap GaN technology, yield a figure of merit (Qg × RDS(on)) significantly ahead of traditional silicon devices.
Performance advantages
GaN’s material properties deliver low conduction losses, very low switching losses at high operating frequencies, and zero reverse-recovery charge. These characteristics enable reduced system size, weight, and operating temperature—critical for power semiconductors in robotics, industrial power supplies, and smart-grid converters for energy generation, distribution, and storage.
The devices can drop into existing power-conversion circuits as MOSFET replacements or enable new, higher-frequency topologies. Higher switching frequencies reduce the size of magnetics and passives, allowing a more compact power stage and greater power density.
Packaging and availability
Devices are housed in DPAK, TO-LL, and PowerFLAT surface-mount packages, widely supported by major electronic design automation libraries and toolchains. The TO-LL and PowerFLAT variants include a Kelvin source connection that separates the gate-control circuit from the main power path, maximizing noise immunity and preserving timing margin.
Production is underway, with pricing from $0.63 to $2.25 per unit in 1,000-piece quantities, available through ST’s eStore and distributors.
Forward-looking significance
As AI workloads and electrification drive exponential demand for efficient power conversion, GaN’s ability to shrink system footprint while improving thermal performance positions it as a strategic enabler. ST’s continued portfolio expansion—with additional voltage ratings and features planned—signals that GaN is moving from niche to mainstream in medium- and high-power applications, from humanoid robotics to advanced consumer power supplies.
