Samsung Electronics will break ground in September on a KRW 6T HBM production and advanced packaging facility at its Onyang campus in Asan, after the project cleared a provincial urban-planning review, according to DigiTimes.
The plant, worth about $4.3B, adds dedicated capacity for high-bandwidth memory, the component at the center of the AI boom. Samsung has been racing to close the gap with SK hynix, the market leader in HBM for Nvidia’s accelerators.
The move is one of several capacity plays across the company. Samsung is considering shifting legacy memory backend work to Vietnam to free floor space, and is stacking its Pyeongtaek fabs three stories tall to chase AI memory demand. Its foundry arm has also marked up AI-era wafer prices by up to 15%.
Memory makers are pulling forward investment as AI infrastructure spending keeps demand ahead of supply. Analysts project DRAM markets to stay undersupplied through 2028, with HBM4 stacks consuming three to four conventional DRAM wafers of fab capacity each.
Onyang becomes the latest site in Samsung’s HBM expansion plan. Production timing beyond the September groundbreaking has not been disclosed.
