ROHM has introduced the TSC3PAK, a surface-mount package for silicon carbide (SiC) MOSFETs that delivers heat dissipation comparable to through-hole designs while enabling automated assembly.
Package design and thermal performance
The TSC3PAK measures 14.00mm x 18.58mm x 3.50mm and places its heat dissipation surface on the top of the package. This top-side cooling structure achieves thermal performance equivalent to conventional through-hole packages such as TO-247-4L, but in a surface-mount form factor that supports automated mounting processes.
Mass production of the new package began in June 2026. By eliminating manual mounting, the design reduces labor costs and improves manufacturing throughput for high-volume applications.
Application drivers in xevs and industrial equipment
In xEVs, SiC devices are expanding beyond main inverters into power conversion circuits for onboard chargers (OBCs) and electric compressors. These applications demand higher efficiency to improve charging speed and extend cruising range. The TSC3PAK targets these use cases directly.
Industrial equipment is also adopting SiC devices, including high-performance server power supplies and photovoltaic (PV) inverters. These systems require reliable, high-efficiency operation under continuous load, making surface-mount SiC packages increasingly attractive.
Addressing the through-hole trade-off
Conventional SiC devices have relied on through-hole packages like TO-247 for their excellent heat dissipation during high-power operation. However, through-hole components require manual mounting, and their larger form factor limits the ability to achieve a lower overall system profile.
Surface-mount SiC devices compatible with automated assembly have begun gaining traction. The TSC3PAK bridges the gap by offering through-hole-class thermal performance in a surface-mount package, enabling both design flexibility and manufacturing efficiency.
Safety and electrical performance
ROHM’s proprietary groove structure provides a creepage distance of 6.66mm, which the company claims is class-leading. This allows the package to accommodate an AC peak voltage of 1200V in a Pollution Degree 2 environment, enabling safe insulation design in high-voltage applications while maintaining compatibility with existing market standards.
The TSC3PAK incorporates ROHM’s 4th Generation SiC MOSFETs, which deliver low ON-resistance and high-speed switching. Switching losses during power conversion are significantly reduced, contributing to higher application efficiency and lower overall power consumption.
The TSC3PAK marks a practical step toward automating SiC power module assembly without sacrificing thermal or electrical performance. As xEV and industrial power systems demand higher efficiency and lower manufacturing costs, this package positions ROHM to serve a growing market for surface-mount SiC solutions.
