SemiQ expands QSiC Dual3 module lineup for AI data-center power systems

SemiQ has expanded its QSiC Dual3 family of half-bridge SiC MOSFET modules with high-thermal-performance options and new 1700V devices, targeting the demanding power-conversion requirements of AI data centers.

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SemiQ has expanded its QSiC Dual3 family of half-bridge SiC MOSFET modules with high-thermal-performance options and new 1700V devices, targeting the demanding power-conversion requirements of AI data centers.

New thermal and voltage options

The expanded family adds modules with aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM), designated with the suffix ‘-NT’. These enhancements reduce junction-to-case thermal resistance, enabling smaller, lighter heatsinks and simplified system design. New 1700V devices — models GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT) — will sample in the coming months.

The modules also include an optional parallel Schottky barrier diode (SBD) to cut switching losses at high temperatures. Several devices achieve an RDSon as low as 1mΩ, supporting 1150A at 1200V from a 62mm x 152mm package.

Applications in AI infrastructure

The QSiC Dual3 series is designed for AC–DC converters and solid-state transformers (SSTs) in AI data-center power systems, as well as grid converters for energy storage and industrial motor drives for chillers and cooling towers. “Given that data centers require continuous, round-the-clock operation, maximizing efficiency is critical,” said president Dr. Timothy Han. “The flexible design and industry-leading power density of our QSiC Dual3 series supports both active front-ends and compressor drives on liquid chiller applications.”

The modules enable direct conversion from medium-voltage 13.8kV or 35kV AC to 800V DC, bypassing traditional transformer stages. This architecture improves overall system efficiency, a key concern as AI workloads drive exponential growth in data-center power demand.

Design and reliability

The QSiC Dual3 family is engineered to replace IGBT modules with minimal redesign. All MOSFET die undergo wafer-level gate-oxide burn-in tests exceeding 1450V, ensuring reliability in continuous-duty environments. The modules’ low thermal resistance and high power density allow designers to shrink cooling systems, reducing total cost of ownership.

SemiQ is showcasing the expanded lineup at PCIM 2026 in Nuremberg, Germany (June 9–11), at Alfatec’s booth (Hall 4A, #110).

Significance

SemiQ’s expanded QSiC Dual3 family directly addresses the efficiency and thermal challenges of next-generation AI data centers. By enabling higher-voltage, higher-density power conversion with proven SiC reliability, the modules position SemiQ as a key enabler of the infrastructure required to sustain AI’s relentless growth.

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