Hangzhou Garen Semiconductor announced on June 24 that it has established the world’s first mass-production line compatible with both 6-inch and 8-inch homoepitaxial gallium oxide wafers, breaking a long-standing barrier for ultra-wide-bandgap semiconductors.
The global gallium oxide industry has been confined to 2-inch to 4-inch wafers, limiting large-scale manufacturing of advanced power devices. Garen’s production line combines proprietary cast-growth single-crystal technology with MOCVD epitaxy, reducing iridium consumption and cutting substrate costs by more than 80% per wafer.
Gallium oxide offers high breakdown field strength, low conduction losses, and exceptional high-temperature performance, making it a strong candidate for high-voltage power grids, EVs, photovoltaic energy storage, and advanced RF communications. An 8-inch wafer can produce roughly four times as many chips as a 4-inch wafer.
Garen said it has already delivered 6-inch wafers to leading chipmakers and secured long-term supply agreements. Several overseas enterprises and research institutions have also placed orders, accelerating commercial adoption of the material.
