Northrop Grumman has fabricated a gallium nitride (GaN) chip that sets a new performance benchmark for W-band RF, achieving market readiness in under six months.
Chip performance and applications
The chip fully leverages the W-band spectrum, enabling military radar systems to transmit secure data wirelessly via satellites at higher speeds. It also supports next-generation commercial 5G and 6G connectivity, bridging defense and civilian infrastructure needs.
Northrop Grumman claims the device establishes a new performance standard for both military and commercial use. The rapid development cycle—from design to market-ready silicon—underscores the company’s ability to accelerate advanced semiconductor deployment.
Manufacturing and program context
The chip was manufactured at Northrop Grumman’s semiconductor facility in Redondo Beach, California. It was developed through the Microelectronics Commons California DREAMS hub, where Northrop Grumman serves as a leading partner.
This program is funded by the Office of the Under Secretary of War for Research and Engineering (OUSW(R&E)), operating as a U.S. industry–government–academia partnership. The collaboration model enabled the chip to move from concept to production in under six months, a timeline significantly shorter than typical GaN device development cycles.
Technical significance
GaN technology offers higher power density and efficiency than traditional silicon or gallium arsenide (GaAs) for high-frequency RF applications. W-band (75–110 GHz) is critical for high-resolution radar, secure satellite communications, and future cellular infrastructure due to its wide available bandwidth and reduced atmospheric interference.
Northrop Grumman’s achievement demonstrates that GaN can be scaled for W-band applications without compromising manufacturing speed. This positions the company to supply both defense and commercial markets with a proven, production-ready device.
Forward-looking significance
This chip signals a broader shift: GaN is no longer a niche research material for defense labs but a viable commercial technology for high-frequency RF systems. With a six-month development cycle, Northrop Grumman has shown that advanced GaN devices can be brought to market at a pace that matches commercial 5G/6G rollout timelines. The result is a dual-use capability that strengthens national security while accelerating next-generation wireless infrastructure.
