EPC just released engineering samples of its EPC2366, a 40-volt, 0.8 milliohm gallium nitride transistor that’s designed to do what silicon has done for decades—only faster, cooler, and smaller.
This isn’t just another chip. The EPC2366 packs what EPC calls an industry-leading figure of merit: 10 milliohm-nanocoulombs. That’s a measure of how efficiently the transistor switches, and it’s the kind of number that makes power engineers sit up. It also boasts zero reverse recovery, meaning no energy-sucking diode losses when switching direction. In plain English: less heat, less waste, more speed.
The package is a compact 3.3mm by 2.6mm PQFN. That’s tiny enough to squeeze into high-density 48-volt converters for AI servers, datacom gear, high-frequency synchronous rectifiers, and even 24-volt battery-powered motor drives. The promise? Higher-frequency operation and smaller system size—exactly what data centers and electric motors are screaming for.
EPC CEO Alex Lidow frames it as a beachhead expansion. “With the EPC2366, and upcoming lower-voltage parts, we are expanding the GaN beachhead across low-voltage applications that have long been dominated by silicon,” he says. Translation: GaN has already eaten into high-voltage power supplies. Now it’s coming for your 12-volt and 24-volt rails.
For now, engineering samples are available for qualified designs. That’s the gatekeeper speak for “if you’re serious, we’ll send you one.” But the message is clear: the silicon MOSFET’s long reign in low-voltage power is facing its most credible challenger yet. The real question isn’t whether GaN will take over—it’s how fast.
