STMicroelectronics has launched a 700V gallium nitride (GaN) transistor family under its STPOWER portfolio, targeting efficiency and power density gains in high-voltage applications strained by rising AI server loads and the limits of silicon.
Product introduction
The seven new enhancement-mode GaN high-electron-mobility transistors (HEMTs) operate at a 700V rating, covering continuous current from 6A to 29A with typical on-resistance (RDS(on)) ranging from 53mΩ to 270mΩ. These devices leverage GaN’s wide-bandgap properties—low conduction losses, minimal switching loss at high frequencies, and zero reverse-recovery charge—to reduce system size, weight, and thermal burden.
Technical advantages
GaN’s inherent ultra-low internal capacitances and low gate charge yield a figure of merit (Qg × RDS(on)) significantly superior to traditional silicon MOSFETs. The new transistors support higher-frequency topologies that shrink magnetics and passives, enabling more compact power stages and higher power density. A Kelvin source connection on TO-LL and PowerFLAT packages isolates the gate-control circuit from the main power path, improving noise immunity and preserving timing margin.
Application scope
The 700V PowerGaN devices are designed for medium- to high-power systems including robotics, industrial power supplies, and smart-grid converters for energy generation, distribution, and storage. They can directly replace silicon MOSFETs in existing circuits or enable novel, higher-frequency architectures. Mario Aleo, ST’s executive VP for Power & Discrete, noted the portfolio will expand with additional voltage ratings to support AI servers, humanoid robotics, and advanced consumer power applications.
Availability and packaging
Devices are housed in DPAK, TO-LL, and PowerFLAT 8×8 surface-mount packages, all supported by major electronic design automation libraries. The PowerFLAT variants feature a solderable source pad for enhanced thermal performance. Production is underway, with pricing from $0.63 to $2.25 per unit in 1,000-piece quantities.
Forward-looking significance
ST’s 700V GaN launch marks a strategic inflection point for power semiconductors, bridging the gap between silicon’s cost advantages and GaN’s efficiency gains in mid- to high-power electrification. As AI workloads and industrial automation drive demand for denser, cooler power conversion, this portfolio positions GaN as a practical, scalable alternative—not just a niche technology.
